Welcome to the Nitride Semiconductor Laboratory
    Low Dimensional Materials Research Centre
    University of Malaya
    Kuala Lumpur, Malaysia

    Find our laboratory activities for postgraduate research, collaboration and commercialization!

    GaN-on-GaN Collaboration for Efficient Light-Emitting Diodes

    GaN-on-GaN has many advantages, such as vertical device structure, better heat dissipation, higher current density (5 x higher than sapphire), lower droop, lower crystal defects, etc that translate to higher efficiency devices. Our research focuses on epitaxy engineering to achieve ultimate device performance.

    GaN-on-Si Collaboration for Cost-Efficient Power Devices 

    The development of high frequency AlGaN-based high electron mobility transistors (HEMT) is of great interest due to their promising applications in high-power switching and radio frequency operations. GaN-on-Si technology allows HEMTs mass-manufacturing on large-diameter Si wafers.

    Non-Polar m-GaN & a-GaN

    The performance of c-plane GaN has been shown to be limited by the piezoelectric polarization along the polar-axis of the quantum well. Therefore, numerous
    efforts have been undertaken to grow GaN along non-polar directions such as non-polar m- and a-GaN. Our work employs 3-step growth technique to obtain m-GaN and a-GaN, with optimizations such as SLS or multi-layer to further enhance the crystal quality and surface morphology of the non-polar m- and a-GaN.

    Semipolar GaN

    The majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. To date, it is still a great challenge to develop nitride-based longer wavelength devices such as green, yellow and red emitters. One clear way forward would be to grow III-nitride device structures along a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects.

    Why Nitride Semiconductors?

    Group-III nitride semiconductors have been recognized as among the most promising materials for optical devices in the short-wavelength region because of their wide bandgap with direct transition. Since the AlGaInN system can cover a very wide wavelength range, from 200 nm to more than 1700 nm, it is applicable for optoelectronics devices in the ultra-violet (UV), visible and infra-red (IR) region. The high electron-saturation velocity in GaN is also suitable for application in high-speed and high-power electronic devices. The superior physical and chemical stability of the nitride semiconductors will enable them to operate in harsh environments. Moreover, nitride-based devices are the most “environmentally friendly” ones available.

    We work on what's truly important

    The research topics in our team are strategically selected to solve important issues in nitride semiconductor.

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    Passionate About GaN? Let's Join Us

    Join the awesome team at Malaysia's most complete semiconductor R&D facilities!